M. M. De Souza, O. Spulber, E. M. Sankara Narayanan
{"title":"一种新颖的“酷”绝缘基晶体管","authors":"M. M. De Souza, O. Spulber, E. M. Sankara Narayanan","doi":"10.1109/ISPSD.2000.856833","DOIUrl":null,"url":null,"abstract":"A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (/spl beta/+1)* the Cool MOSFET current, where /spl beta/ is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A novel 'cool' insulated base transistor\",\"authors\":\"M. M. De Souza, O. Spulber, E. M. Sankara Narayanan\",\"doi\":\"10.1109/ISPSD.2000.856833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (/spl beta/+1)* the Cool MOSFET current, where /spl beta/ is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (/spl beta/+1)* the Cool MOSFET current, where /spl beta/ is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
