{"title":"硼扩散模型的改进及其对逆短通道效应计算的影响","authors":"M. Hane, C. Rafferty, T. Ikezawa, H. Matsumoto","doi":"10.1109/SISPAD.1996.865251","DOIUrl":null,"url":null,"abstract":"The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Boron diffusion model refinement and its effect on the calculation of reverse short channel effect\",\"authors\":\"M. Hane, C. Rafferty, T. Ikezawa, H. Matsumoto\",\"doi\":\"10.1109/SISPAD.1996.865251\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865251\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Boron diffusion model refinement and its effect on the calculation of reverse short channel effect
The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.