{"title":"RESURF技术综述","authors":"A. Ludikhuize","doi":"10.1109/ISPSD.2000.856763","DOIUrl":null,"url":null,"abstract":"RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC's and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"323","resultStr":"{\"title\":\"A review of RESURF technology\",\"authors\":\"A. Ludikhuize\",\"doi\":\"10.1109/ISPSD.2000.856763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC's and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"323\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RESURF (Reduced Surface Field) technology is one of the most widely-used methods for the design of lateral high-voltage, low on-resistance devices. The technique has allowed the integration of HV devices, ranging from 20 V to 1200 V, with bipolar and MOS transistors. A technical review is given on the technology as developed during the last 20 years. The paper discusses the invention and its application in discrete devices, in Junction-Isolated IC's and SOI, and as Multiple Resurf. It includes an evaluation of topics like breakdown, on-resistance, high-side and high-current effects and reliability.
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