TAS-MRAM结构中基于耦合的阻性开放缺陷

2012 17th IEEE European Test Symposium (ETS) Pub Date : 2012-05-28 DOI:10.1109/ETS.2012.6233034

Joao Azevedo, A. Virazel, A. Bosio, L. Dilillo, P. Girard, A. Todri, G. Prenat, J. Alvarez-Herault, K. Mackay

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引用次数: 3

摘要

热辅助开关磁随机存取存储器(TAS-MRAM)是一种新兴技术，与现有的非易失性存储器技术相比，它具有许多优点。在本文中，我们展示了由电阻性开放缺陷引起的耦合故障如何影响TAS-MRAM结构。结果表明，读和写操作可能会影响这些缺陷，并可能导致单胞和双胞故障行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Coupling-based resistive-open defects in TAS-MRAM architectures

Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.

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2012 17th IEEE European Test Symposium (ETS)

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