{"title":"III-V异质结双极晶体管的热感应电流收缩","authors":"E. Koenig, J. Schneider, U. Seiler, U. Erben","doi":"10.1109/BIPOL.1994.587878","DOIUrl":null,"url":null,"abstract":"The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally induced current constriction in III-V heterojunction bipolar transistors\",\"authors\":\"E. Koenig, J. Schneider, U. Seiler, U. Erben\",\"doi\":\"10.1109/BIPOL.1994.587878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally induced current constriction in III-V heterojunction bipolar transistors
The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage.
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