三维高密度存储类存储器(SCM)体系结构综述

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 1900-01-01 DOI:10.1109/vlsi-tsa.2012.6210107

Brian Lee

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摘要

本文描述了未来高密度存储类存储器产品的基本构建模块和体系结构。对三维建筑进行了综述。对交叉点选择器件和存储单元进行了详细的回顾，然后给出了它们的集成方案。提出了对其挑战和潜在解决办法的批判性审查。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Review of 3D high density storage class memory (SCM) architecture

This paper describes a fundamental building block and architecture of future high density storage class memory products. A review of 3D architecture is presented. A detailed review of cross point select devices and memory cells are conducted followed by their integration scheme. A critical review of its challenges and potential solutions are proposed.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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