基本CMOS器件泄漏电流和电容的评估

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292905

P. Girard, P. Nouet, A. Khalkhal, F. M. Roche

{"title":"基本CMOS器件泄漏电流和电容的评估","authors":"P. Girard, P. Nouet, A. Khalkhal, F. M. Roche","doi":"10.1109/ICMTS.1993.292905","DOIUrl":null,"url":null,"abstract":"A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5- mu m CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Evaluations of leakage currents and capacitances on elementary CMOS devices\",\"authors\":\"P. Girard, P. Nouet, A. Khalkhal, F. M. Roche\",\"doi\":\"10.1109/ICMTS.1993.292905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5- mu m CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文提出了一种简便的飞安培和飞法拉范围内集成结构电流和电容的测定方法。它包括一些测试结构和作为设备的标准晶体管参数分析仪。以最小二极管尺寸为1.5 μ m的CMOS技术为例，实验结果表明了该方法的有效性，并且与仿真结果有较好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Evaluations of leakage currents and capacitances on elementary CMOS devices

A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5- mu m CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

自引率

0.00%

发文量