低剂量SIMOX及其ITOX工艺对SOI膜质量的影响

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI:10.1109/SOI.1997.634911

W. Maszara, J. Bennett, T. Boden, R. Dockerty, C. Gondran, S. Jackett-Murphy, P. Vasudev, M. Anc, H. Hovel

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引用次数: 2

摘要

只提供摘要形式。在低剂量(4E17 cm/sup -2/) SOI SIMOX材料中，内热氧化(ITOX)可以改善埋地氧化物(BOX)的质量。从生长在其上的栅氧化物的完整性来看，确定了ITOX SIMOX的SOI膜质量与体积一样好。我们研究了低剂量SIMOX材料及其高温退火和后续ITOX工艺对其SOI膜结构和电性能的影响。本文报道了一些关于SOI薄膜质量及其与工艺参数关系的新发现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low dose SIMOX and impact of ITOX process on quality of SOI film

Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm/sup -2/) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have investigated low dose SIMOX material and the impact of its high temperature annealing as well as the subsequent ITOX process on structure and electrical properties of its SOI film. Several new findings about the SOI film quality and its relationship to process parameters are reported.

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1997 IEEE International SOI Conference Proceedings

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