用锗缩合技术在硅表面制备高锗含量的SiGe层

S. Balakumar, T. Jun wei, C. Tung, G. Lo, H. Nguyen, C. Fong, A. Agarwal, R. Kumar, N. Balasubramanian, S.J. Lee, D. Kwong
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引用次数: 3

摘要

众所周知,Ge的冷凝是通过SiGe层的热氧化来实现的,其中Si比Ge氧化得更快,并且Ge原子从氧化物中被排斥到下面的SiGe层中。由于锗的扩散和积累随气体流量和温度的变化而变化,本工作进行了详细的研究,并优化了工艺条件。发现其积累和扩散机制与热环境有关。此外,本文还首次实现了具有高Ge含量和合适界面的SiGe层。利用该技术首次制备了Ge含量在30%及50%以上的块状硅上硅锗
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
It is known that Ge condensation is achieved by thermal oxidation of the SiGe layer whereby Si oxidizes faster as compared to Ge, and the Ge atoms are rejected from the oxide into the SiGe layer below. As the Ge diffusion and accumulation varies with gas flow and temperature, detailed investigations are carried out and process conditions are optimized in this work. The accumulation and diffusion mechanism is found to be dependent on the thermal environment. Further to that, SiGe layers with high Ge content with proper interface is also achieved for the first time and presented in this article. SiGe on bulk Si with 30% and above 50% Ge content are fabricated using this technique for the first time
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