MgO阻性开关存储器件的传导机理和可靠性特性

F. Chiu, Jun-Jea Feng, W. Shih, Po-Yueh Cheng, Chih-Yao Huang
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引用次数: 2

摘要

本文研究了基于MgO薄膜的阻性开关存储器件。Pt/MgO/Pt金属-绝缘体-金属(MIM)二极管的双极电阻开关特性需要约2.36 MV/cm的形成电场。室温下,设置电场约为1.5 MV/cm,重置电场约为- 0.9 MV/cm。电铸后,高阻态(HRS)与低阻态(LRS)的电阻比约为105。电流密度-电场(J-E)特性的温度依赖性表明,HRS和LRS的主要传导机制分别是跳变传导和欧姆传导。据此,得到了MgO薄膜中的跳跃距离、陷阱能级和电子迁移率。此外,还测量了基于mgo的MIM存储设备的程序/擦除循环耐久性、数据保留和读取耐久性的可靠性特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conduction mechanisms and reliability characteristics in MgO resistive switching memory devices
In this work, the resistive switching memory devices based on MgO thin film were fabricated and investigated. A forming electric field of about 2.36 MV/cm is required to induce bipolar resistive switching characteristic of the Pt/MgO/Pt metal-insulator-metal (MIM) diodes. At room temperature, the set and reset electric fields are about 1.5 MV/cm and −0.9 MV/cm, respectively. After the electroforming process, the resistance ratio of high resistance state (HRS) and low resistance state (LRS) is on the order of 105. The temperature dependence of current density-electric field (J-E) characteristics indicates that the dominant conduction mechanism is the hopping conduction and the Ohmic conduction in HRS and LRS, respectively. Accordingly, the hopping distance, trap energy level, and electron mobility in MgO films are obtained. In addition, the reliability characteristics of program/erase cycling endurance, data retention, and read durability of the MgO-based MIM memory devices were measured.
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