DPL模型对电子器件和集成电路传热的适用范围

M. Zubert, T. Raszkowski, A. Samson, M. Janicki, P. Zając
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引用次数: 1

摘要

本文介绍了双相滞后传热模型在电子器件和集成电路中的适用范围。此外,还研究了用双相滞后方法代替经典傅立叶-基尔霍夫模型进行传热建模的必要性。为了获得上述的适用范围,这两种分析的热模型已用于晶体管基本单元,包括FinFET技术以及功率器件,如单极(MOSFET, VDMOS),双极和绝缘栅双极晶体管(IGBT)-SiC合并功率二极管。对接收到的仿真结果进行了详细的比较和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The scope of applicability of DPL model to the heat transfer in electronic devices and integrated circuits
This paper presents the scope of applicability of Dual-Phase-Lag heat transfer model in electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity of use the Dual-Phase-Lag approach, instead of the classical Fourier-Kirchhoff model, to heat transfer modelling is included. In order to obtain the mentioned scope of applicability both analyzed thermal model has been used for the transistor elementary cells including the FinFET technology as-well-as power devices e.g. unipolar (MOSFET, VDMOS), bipolar and insulated gate bipolar transistors (IGBT)-SiC merged power diode. The received simulation results have been thoroughly-compared and analyzed in detail.
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