D. Grgec, M. Vexler, C. Jungemann, B. Meinerzhagen
{"title":"MOS结构隧道电流的高效蒙特卡罗模拟","authors":"D. Grgec, M. Vexler, C. Jungemann, B. Meinerzhagen","doi":"10.1109/ESSDERC.2002.194899","DOIUrl":null,"url":null,"abstract":"In this paper, a new efficient model for the evaluation of tunnel currents in MOS struactures for Monte Carlo device simulation is presented. Several methods for tunneling probability calculation can be used and the model has the important advantage of being compatible with the modified local density approximation for quantum correction of the carrier density. Implementation of the model in a Monte Carlo device simulaton is explained. Simulations of test MOSFETs and comparisons with measurements are presented.","PeriodicalId":207896,"journal":{"name":"32nd European Solid-State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures\",\"authors\":\"D. Grgec, M. Vexler, C. Jungemann, B. Meinerzhagen\",\"doi\":\"10.1109/ESSDERC.2002.194899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new efficient model for the evaluation of tunnel currents in MOS struactures for Monte Carlo device simulation is presented. Several methods for tunneling probability calculation can be used and the model has the important advantage of being compatible with the modified local density approximation for quantum correction of the carrier density. Implementation of the model in a Monte Carlo device simulaton is explained. Simulations of test MOSFETs and comparisons with measurements are presented.\",\"PeriodicalId\":207896,\"journal\":{\"name\":\"32nd European Solid-State Device Research Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"32nd European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2002.194899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"32nd European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2002.194899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures
In this paper, a new efficient model for the evaluation of tunnel currents in MOS struactures for Monte Carlo device simulation is presented. Several methods for tunneling probability calculation can be used and the model has the important advantage of being compatible with the modified local density approximation for quantum correction of the carrier density. Implementation of the model in a Monte Carlo device simulaton is explained. Simulations of test MOSFETs and comparisons with measurements are presented.
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