K. Tsubouchi, K. Masu, N. Shigeeda, T. Matano, Y. Hiura, N. Mikoshiba, S. Matsumoto, T. Asaba, T. Marui, T. Kajikawa
{"title":"用DMAH选择性和非选择性LPCVD沉积铝，用扫描μ-RHEED显微镜观察单晶铝的微区","authors":"K. Tsubouchi, K. Masu, N. Shigeeda, T. Matano, Y. Hiura, N. Mikoshiba, S. Matsumoto, T. Asaba, T. Marui, T. Kajikawa","doi":"10.1109/VLSIT.1990.110980","DOIUrl":null,"url":null,"abstract":"A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO2 with potential application to VLSI fabrication","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Selective and nonselective deposition of aluminum by LPCVD using DMAH and microregion observation of single crystal aluminum with scanning μ-RHEED microscope\",\"authors\":\"K. Tsubouchi, K. Masu, N. Shigeeda, T. Matano, Y. Hiura, N. Mikoshiba, S. Matsumoto, T. Asaba, T. Marui, T. Kajikawa\",\"doi\":\"10.1109/VLSIT.1990.110980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO2 with potential application to VLSI fabrication\",\"PeriodicalId\":441541,\"journal\":{\"name\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1990.110980\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers.1990 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1990.110980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selective and nonselective deposition of aluminum by LPCVD using DMAH and microregion observation of single crystal aluminum with scanning μ-RHEED microscope
A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced high quality hillock-free and alloy-spike-free aluminum on Si, TiN and SiO2 with potential application to VLSI fabrication
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
