富士通的铜互连技术以及在现有半导体生产线上安装铜设备的问题

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787094

M. Yamada, H. Yagi, S. Sugatani, M. Miyajima, D. Matsunaga, T. Hosoda, H. Kudo, N. Misawa, T. Nakamura

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引用次数: 2

摘要

只提供摘要形式。本文介绍了富士通针对0.18 /spl mu/m及以上一代的铜互连技术。针对0.13 /spl mu/m的一代，还演示了一些新的铜布线集成方案。最后，我们讨论了在现有半导体生产线上安装Cu设备的一些重要方面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cu interconnect technologies in Fujitsu and problems in installing Cu equipment in an existing semiconductor manufacturing line

Summary form only given. In this paper, Cu interconnect technologies in Fujitsu targeted for the 0.18 /spl mu/m generation and beyond are introduced. Some new integration schemes for Cu wiring are also demonstrated, targeted for the 0.13 /spl mu/m generation. Finally, we discuss some important aspects of installation of Cu equipment in an existing semiconductor manufacturing line.

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Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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