一种可扩展的单晶体管/单电容存储单元结构，其特点是用于兆位feram的角度电容布局

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689227

T. Kachi, K. Shoji, H. Yamashita, T. Kisu, K. Torii, T. Kumihashi, Y. Fujisaki, N. Yokoyama

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引用次数: 2

摘要

采用0.5-/spl mu/m技术，研制出了单元尺寸为4.5 /spl mu/m/sup / 2/的单晶体管/单电容铁电随机存取存储器(FeRAM)单元。该电池具有堆叠电容器结构，具有多晶硅插头和角度电容器布局。这种独特的电容器布局增加了板接触和单个电容器电极之间的对准公差，而不增加电池面积。在板接触形成后进行O/ sub2 /退火，恢复残余极化退化。将该电池应用于实验性的4kbit存储电池阵列中，获得了良好的铁电电容特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A scalable single-transistor/single-capacitor memory cell structure characterized by an angled-capacitor layout for megabit FeRAMs

A single-transistor/single-capacitor ferroelectric random access memory (FeRAM) cell having a cell size of 4.5 /spl mu/m/sup 2/ has been developed using 0.5-/spl mu/m technology. This cell features a stacked capacitor structure with a poly-Si plug and an angled-capacitor layout. This unique capacitor layout increases the alignment tolerance between the plate contact and the individual capacitor electrodes without increasing the cell area. O/sub 2/ annealing was applied after the plate-contact formation to restore the remanent polarization degradation. Favorable ferroelectric capacitor characteristics were observed when this cell was used in an experimental 4-Kbit memory-cell array.

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来源期刊

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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