用统一模型分析a- si:H薄膜晶体管的低频噪声

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI:10.1109/IPFA.2011.5992738

Y. Son, Jaehong Lee, Jaeho Lee, Hyungcheol Shin

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引用次数: 0

摘要

研究了顶部接触式a-Si:H TFT的低频噪声特性。对于低频噪声数据的分析，采用结合载波数和迁移率波动的统一噪声模型。通过电流-电压(I-V)测量和噪声分析，证实了这两种机制是a- si:H TFT中噪声的主要因素。根据实测的低频噪声特征，利用统一的噪声模型提取有效阱密度和散射系数。

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Analysis of low-frequency noise in a-Si:H thin-film transistor by using a unified model

Low-frequency noise characteristics are investigated in top contact type a-Si:H TFT. For analysis of low-frequency noise data, the unified noise model is applied which combine the carrier number and mobility fluctuations. These two mechanisms are confirmed as a main element of noise in a-Si:H TFT by using current-voltage (I–V) measurement and noise analysis. From the measured low-frequency noise characteristics, the effective trap density and scattering coefficient are extracted by using the unified noise model.

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18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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