集成热稳定，低k AF4聚合物0.18 /spl μ l /m互连及更高

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623705

Ralston, Gaynor, Singh, Le, Havemann, J G Cleary, Wing, Kelly

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引用次数: 5

摘要

AF4(或聚苯乙烯-f)已集成到双电平金属梳状电容器作为间隙填充电介质。与使用HSQ作为电介质的电容器相比，使用AF4电介质和PECVD Si02衬里的梳子的电容降低了10%，而使用AF4衬里的梳子的电容降低了13.5%。使用HSQ的梳子和使用AF4的内衬梳子的泄漏电流是可比较的，而使用AF4的非内衬梳子的泄漏电流至少高一个数量级。

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Integration Of Thermally Stable, Low-k AF4 Polymer For 0.18 /spl mu/m Interconnects And Beyond

AF4 (or parylene-F) has been integrated into double-level-metal comb capacitors as the gap-fill dielectric. The capacitance of combs with AF4 dielectric and PECVD Si02 liner displays a 10% reduction in capacitance relative to capacitors using HSQ as the dielectric, while unlined combs using AF4 display a 13.5% reduction. The leakage current of the combs using HSQ and the lined combs using AF4 is comparable, while the leakage current for the unlined combs using AF4 is at least one order of magnitude higher.

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1997 Symposium on VLSI Technology

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