基于0.13µm SiGe BiCMOS技术的220-245 GHz开关波束巴特勒矩阵

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798158

M. Elkhouly, Ma Yanfei, C. Meliani, F. Ellinger, J. Scheytt

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引用次数: 1

摘要

提出了一种采用0.13μm SiGe BiCMOS技术的220 ~ 245 GHz 4路Butler矩阵芯片。该芯片具有四个230 GHz放大器，增益接近9 dB。SP4T开关集成在波束形成网络的四个输出之间进行选择。最后，集成了一个用于补偿SP4T损耗的放大器。该芯片显示0 dB的插入增益，并从3.3 V电源中吸取104 mA，主要由放大器消耗。整个芯片的尺寸为1.5 × 2.4 mm2。

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A 220–245 GHz switched beam Butler Matrix in 0.13 µm SiGe BiCMOS technology

This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm2.

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来源期刊

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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