R. Kwasnick, M. Reilly, J. Hatfield, S. C. Johnson, A. Rahman
{"title":"VLSI技术规模对HTOL的影响","authors":"R. Kwasnick, M. Reilly, J. Hatfield, S. C. Johnson, A. Rahman","doi":"10.1109/IRPS.2012.6241850","DOIUrl":null,"url":null,"abstract":"High Temperature Operating Life (HTOL) is a standard stress used in IC product qualification. With VLSI technology scaling, gate dielectric TDDB models have higher acceleration factors leading to an increase in predicted HTOL failure, particularly with the transition to high-k gate dielectrics. However, cumulative end-of-life field failures remain substantially unchanged from previous technologies. A calculator tool which comprehends both field and HTOL failure modeling illustrates the trend and guides product qualification expectations.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Impact of VLSI technology scaling on HTOL\",\"authors\":\"R. Kwasnick, M. Reilly, J. Hatfield, S. C. Johnson, A. Rahman\",\"doi\":\"10.1109/IRPS.2012.6241850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High Temperature Operating Life (HTOL) is a standard stress used in IC product qualification. With VLSI technology scaling, gate dielectric TDDB models have higher acceleration factors leading to an increase in predicted HTOL failure, particularly with the transition to high-k gate dielectrics. However, cumulative end-of-life field failures remain substantially unchanged from previous technologies. A calculator tool which comprehends both field and HTOL failure modeling illustrates the trend and guides product qualification expectations.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Temperature Operating Life (HTOL) is a standard stress used in IC product qualification. With VLSI technology scaling, gate dielectric TDDB models have higher acceleration factors leading to an increase in predicted HTOL failure, particularly with the transition to high-k gate dielectrics. However, cumulative end-of-life field failures remain substantially unchanged from previous technologies. A calculator tool which comprehends both field and HTOL failure modeling illustrates the trend and guides product qualification expectations.
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