用于无线应用的高性能，无外接素，可制造的3.3 V 0.35 /spl mu/m BiCMOS技术

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623682

Chyan, Chaudhry, Ma, Chen, Carroll, Nagy, Becerro, Lee, Iannuzzi

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引用次数: 4

摘要

本文将介绍一种无外源性、可制造、高性能的3.3 V 0.35 pm高能植入BiCMOS (HEIBiC)技术。所开发的HEIBiC工艺包括单多晶硅NPN双极晶体管，其积为138 GHzV，是无外延埋式集电极的硅BiCMOS的最佳结果之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Very High Performance, Epi-free, And Manufacturable 3.3 V 0.35 /spl mu/m BiCMOS Technology For Wireless Applications

In this paper, an epi-free, manufacturable, and high performance 3.3 V 0.35 pm High-Energy Implanted BiCMOS (HEIBiC) technology will be presented. The developed HEIBiC process includes a single-polysilicon NPN bipolar transistor with product of 138 GHzV is shown to be one of the best results for silicon BiCMOS without an epitaxial buried collector.

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1997 Symposium on VLSI Technology

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