超级结mosfet的大信号和小信号输出电容

D. Pattanayak, O. Tornblad
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引用次数: 9

摘要

得到了超级结MOSFET和常规功率MOSFET的小、大信号输出电容与电压的关系,并进行了比较。通过外部电阻的电压脉冲对电容器进行充电和放电,并测量电容器上的电压和电流作为时间的函数。非线性输出电容中存储的电荷与电压呈分段非线性关系,对于vlp为v=aq+bq2。电压、vlp和电荷、qlp和常数a、b、c和d与超结MOSFET漂移区的设计有关。实验表明,当与超级结MOSFET相关的输出电容受到正弦波激励时,由于其非线性,会产生大量的基频谐波。在高电压下,先进的超级结MOSFET输出电容中存储的面积比导通电阻和面积比能量的乘积低于最先进的传统MOSFET。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large-signal and small-signal output capacitances of super junction MOSFETs
The small- and large-signal output capacitances of a super junction MOSFET and a conventional power MOSFET are obtained as a function of voltage and compared. The capacitors are charged and discharged by a voltage pulse through an external resistor and the voltage and current across the capacitors are measured as a function of time. The stored charge in the nonlinear output capacitor is shown to be related to the voltage across it in a piecewise nonlinear way as v=aq+bq2 for v<;vlp and v=vlp+c (q-qlp) +d (q-qlp) 2 for v>vlp. The voltage, vlp and the charge, qlp and the constants, a, b, c and d are related to the design of the super junction MOSFET drift region. It is shown experimentally that when the output capacitor associated with the super junction MOSFET is excited by a sinusoidal wave, a large number of harmonics of the fundamental frequency is obtained due to its nonlinearity. The product of the area specific on-resistance and the area specific energy stored in the output capacitor of an advanced super junction MOSFET is shown to be lower than that of a state of the art conventional MOSFET at high voltages.
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