{"title":"超级结mosfet的大信号和小信号输出电容","authors":"D. Pattanayak, O. Tornblad","doi":"10.1109/ISPSD.2013.6694458","DOIUrl":null,"url":null,"abstract":"The small- and large-signal output capacitances of a super junction MOSFET and a conventional power MOSFET are obtained as a function of voltage and compared. The capacitors are charged and discharged by a voltage pulse through an external resistor and the voltage and current across the capacitors are measured as a function of time. The stored charge in the nonlinear output capacitor is shown to be related to the voltage across it in a piecewise nonlinear way as v=aq+bq2 for v<;vlp and v=vlp+c (q-qlp) +d (q-qlp) 2 for v>vlp. The voltage, vlp and the charge, qlp and the constants, a, b, c and d are related to the design of the super junction MOSFET drift region. It is shown experimentally that when the output capacitor associated with the super junction MOSFET is excited by a sinusoidal wave, a large number of harmonics of the fundamental frequency is obtained due to its nonlinearity. The product of the area specific on-resistance and the area specific energy stored in the output capacitor of an advanced super junction MOSFET is shown to be lower than that of a state of the art conventional MOSFET at high voltages.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Large-signal and small-signal output capacitances of super junction MOSFETs\",\"authors\":\"D. Pattanayak, O. Tornblad\",\"doi\":\"10.1109/ISPSD.2013.6694458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The small- and large-signal output capacitances of a super junction MOSFET and a conventional power MOSFET are obtained as a function of voltage and compared. The capacitors are charged and discharged by a voltage pulse through an external resistor and the voltage and current across the capacitors are measured as a function of time. The stored charge in the nonlinear output capacitor is shown to be related to the voltage across it in a piecewise nonlinear way as v=aq+bq2 for v<;vlp and v=vlp+c (q-qlp) +d (q-qlp) 2 for v>vlp. The voltage, vlp and the charge, qlp and the constants, a, b, c and d are related to the design of the super junction MOSFET drift region. It is shown experimentally that when the output capacitor associated with the super junction MOSFET is excited by a sinusoidal wave, a large number of harmonics of the fundamental frequency is obtained due to its nonlinearity. The product of the area specific on-resistance and the area specific energy stored in the output capacitor of an advanced super junction MOSFET is shown to be lower than that of a state of the art conventional MOSFET at high voltages.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large-signal and small-signal output capacitances of super junction MOSFETs
The small- and large-signal output capacitances of a super junction MOSFET and a conventional power MOSFET are obtained as a function of voltage and compared. The capacitors are charged and discharged by a voltage pulse through an external resistor and the voltage and current across the capacitors are measured as a function of time. The stored charge in the nonlinear output capacitor is shown to be related to the voltage across it in a piecewise nonlinear way as v=aq+bq2 for v<;vlp and v=vlp+c (q-qlp) +d (q-qlp) 2 for v>vlp. The voltage, vlp and the charge, qlp and the constants, a, b, c and d are related to the design of the super junction MOSFET drift region. It is shown experimentally that when the output capacitor associated with the super junction MOSFET is excited by a sinusoidal wave, a large number of harmonics of the fundamental frequency is obtained due to its nonlinearity. The product of the area specific on-resistance and the area specific energy stored in the output capacitor of an advanced super junction MOSFET is shown to be lower than that of a state of the art conventional MOSFET at high voltages.