{"title":"利用脉冲时间调制等离子体降低电荷耦合器件图像传感器等离子体过程中等离子体辐射诱导的界面状态","authors":"N. Okigawa, Y. Ishikawa, S. Samukawa","doi":"10.1109/PPID.2003.1200946","DOIUrl":null,"url":null,"abstract":"We found that ultraviolet (UV) light from helium discharge plasmas and a metal halide lamp clearly induce SiO/sub 2/-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure produced by charge-coupled-device (CCD) wafer processes. A dark current originating in the interface states of CCD image sensors also increases by this UV irradiation. Decreasing the UV light causes pulse-time-modulated (TM) plasma to suppress the interface states, resulting in a CCD dark current. Using optical filters, we revealed that a photon energy of 3.90 eV (318 nm) to 4.96 eV (250 nm) causes an increase in interface states. Even in a practical CCD process, we also found that TM plasma is more effective in suppressing interface states for micro-lens formation processes using CF/sub 4/ and O/sub 2/ plasma etching than CW plasma.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reduction of plasma-radiation-induced interface states for plasma processes of charge-coupled-device image sensors using pulse-time-modulated plasma\",\"authors\":\"N. Okigawa, Y. Ishikawa, S. Samukawa\",\"doi\":\"10.1109/PPID.2003.1200946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We found that ultraviolet (UV) light from helium discharge plasmas and a metal halide lamp clearly induce SiO/sub 2/-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure produced by charge-coupled-device (CCD) wafer processes. A dark current originating in the interface states of CCD image sensors also increases by this UV irradiation. Decreasing the UV light causes pulse-time-modulated (TM) plasma to suppress the interface states, resulting in a CCD dark current. Using optical filters, we revealed that a photon energy of 3.90 eV (318 nm) to 4.96 eV (250 nm) causes an increase in interface states. Even in a practical CCD process, we also found that TM plasma is more effective in suppressing interface states for micro-lens formation processes using CF/sub 4/ and O/sub 2/ plasma etching than CW plasma.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们发现氦放电等离子体和金属卤化物灯的紫外(UV)光在电荷耦合器件(CCD)晶圆工艺产生的金属-硅-氮化硅-硅(MNOS)结构中明显诱导SiO/sub 2/-Si界面态。在这种紫外线照射下,CCD图像传感器的界面状态中产生的暗电流也会增加。减少紫外光会导致脉冲时间调制(TM)等离子体抑制界面状态,导致CCD暗电流。利用滤光片,我们发现3.90 eV (318 nm)到4.96 eV (250 nm)的光子能量会导致界面态的增加。即使在实际的CCD过程中,我们也发现TM等离子体比CW等离子体更有效地抑制CF/sub - 4/和O/sub - 2/等离子体刻蚀的微透镜形成过程中的界面状态。
Reduction of plasma-radiation-induced interface states for plasma processes of charge-coupled-device image sensors using pulse-time-modulated plasma
We found that ultraviolet (UV) light from helium discharge plasmas and a metal halide lamp clearly induce SiO/sub 2/-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure produced by charge-coupled-device (CCD) wafer processes. A dark current originating in the interface states of CCD image sensors also increases by this UV irradiation. Decreasing the UV light causes pulse-time-modulated (TM) plasma to suppress the interface states, resulting in a CCD dark current. Using optical filters, we revealed that a photon energy of 3.90 eV (318 nm) to 4.96 eV (250 nm) causes an increase in interface states. Even in a practical CCD process, we also found that TM plasma is more effective in suppressing interface states for micro-lens formation processes using CF/sub 4/ and O/sub 2/ plasma etching than CW plasma.