超薄栅极氧化物在BT应力下V/亚TH/分布的时间演化

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309978

Y. Mitani, H. Satake

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引用次数: 0

摘要

本文从统计分布的角度研究和讨论了p- mosfet中阈值电压(V/sub TH/)的时间演变。在偏置温度(BT)胁迫下，V/sub TH/分布的色散没有变化，而V/sub TH/的平均值单调增大。另一方面，栅极氧化物软击穿后V/sub - TH/分布明显恶化。

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Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides

In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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