K. Ikeda, M. Ono, D. Kosemura, K. Usuda, M. Oda, Y. Kamimuta, T. Irisawa, Y. Moriyama, A. Ogura, T. Tezuka
{"title":"无掺杂制备金属源极/漏极应变锗纳米线pmosfet的高迁移率和低寄生电阻特性","authors":"K. Ikeda, M. Ono, D. Kosemura, K. Usuda, M. Oda, Y. Kamimuta, T. Irisawa, Y. Moriyama, A. Ogura, T. Tezuka","doi":"10.1109/VLSIT.2012.6242513","DOIUrl":null,"url":null,"abstract":"Metal source/drain (S/D) Ge nanowire MOSFETs with a compressive strain as high as 3.8% were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high inversion hole mobility (μ<sub>eff</sub> = 855 cm<sup>2</sup>/Vs @ N<sub>s</sub> = 5×10<sup>12</sup>cm<sup>-2</sup>) and saturation drain current 731μA/μm at V<sub>d</sub>=-1V were achieved among Ge nanowire pFETs ever reported. It is found that the extremely low contact resistivity ρ<sub>c</sub> ~ 4×10<sup>-8</sup>O cm<sup>2</sup> for the Schottky contact contributes to the high saturation current as well as the high mobility.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes\",\"authors\":\"K. Ikeda, M. Ono, D. Kosemura, K. Usuda, M. Oda, Y. Kamimuta, T. Irisawa, Y. Moriyama, A. Ogura, T. Tezuka\",\"doi\":\"10.1109/VLSIT.2012.6242513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal source/drain (S/D) Ge nanowire MOSFETs with a compressive strain as high as 3.8% were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high inversion hole mobility (μ<sub>eff</sub> = 855 cm<sup>2</sup>/Vs @ N<sub>s</sub> = 5×10<sup>12</sup>cm<sup>-2</sup>) and saturation drain current 731μA/μm at V<sub>d</sub>=-1V were achieved among Ge nanowire pFETs ever reported. It is found that the extremely low contact resistivity ρ<sub>c</sub> ~ 4×10<sup>-8</sup>O cm<sup>2</sup> for the Schottky contact contributes to the high saturation current as well as the high mobility.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-mobility and low-parasitic resistance characteristics in strained Ge nanowire pMOSFETs with metal source/drain structure formed by doping-free processes
Metal source/drain (S/D) Ge nanowire MOSFETs with a compressive strain as high as 3.8% were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high inversion hole mobility (μeff = 855 cm2/Vs @ Ns = 5×1012cm-2) and saturation drain current 731μA/μm at Vd=-1V were achieved among Ge nanowire pFETs ever reported. It is found that the extremely low contact resistivity ρc ~ 4×10-8O cm2 for the Schottky contact contributes to the high saturation current as well as the high mobility.
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