在硅上无氧化物键合的InP膜的异质界面上的电传输

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880572

K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau

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引用次数: 2

摘要

采用直接无氧化键合的方法制备了n-InP/n-Si异质结，并对其电输运进行了研究。首先对波段对准进行了数值计算，并讨论了理论I(V)曲线。然后制作了二极管，并将实验I(V)曲线与理论进行了比较。

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Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si

A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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