大面积MCM-D封装介质涂层SS基板热循环过程中的原位翘曲测量

Anh X. Dang, I. C. Ume, S. Bhattacharya
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摘要

本文报道了采用不锈钢(SS)作为大面积MCM-D封装基板材料的可行性。试验车辆采用0.008英寸厚,12英寸× 12英寸的SS面板,激光钻孔0.01英寸的过孔。介电材料(聚对二甲苯N)沉积在SS面板上和内部通孔壁周围,以便将通孔填充材料与SS衬底体绝缘,并使SS表面不导电。用市售的导电过孔塞材料填充过孔。测试结构暴露在高温下,以模拟衬底在MCM-D薄膜过程中所遭受的热偏移。这项工作的最终目标是能够制造大面积(24英寸× 24英寸)的SS基板,用于减少翘曲的下一代MCM-D封装。本文报道了12英寸× 12英寸SS基板在热循环过程中的动态翘曲测量结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-Situ Warpage Measurement During Thermal Cycling of Dielectric Coated SS Substrate for Large Area MCM-D Packaging
Feasibility of using stainless steel (SS) as a base substrate material for a large area MCM-D packaging is reported in this paper. A test vehicle was fabricated using 0.008 inch thick and 12-inch × 12-inch SS panel with laser drilled 0.01-inch vias. A dielectric material (Parylene N) was deposited on the SS panel and around the inside via walls in order to electrically isolate the via filling material from the body of the SS substrate and also making the SS surface non-conductive. Vias were filled using a commercially available conductive via-plug material. The test structure was exposed to elevated temperatures to simulate the thermal excursion the substrate would be subjected to during the MCM-D thin film process. The end objective of this work is to be able to fabricate large area (24 inch × 24 inch) SS substrates for the next generation MCM-D packaging with reduced warpage. This paper reports results of the dynamic warpage measurement during thermal cycling of a 12-inch × 12-inch SS substrate.
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