高、低介电常数共烧陶瓷封装材料相容性及介电性能

R. Natarajan, J. Dougherty
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引用次数: 0

摘要

集成陶瓷的最新趋势是将无源元件三维集成到低介电常数介质衬底上,以实现单片多层陶瓷衬底。MMC基板在电路密度和器件厄米性方面都有显著的增益,从而提高了可靠性和降低了封装成本。低温玻璃陶瓷基低K带已被证明与银金属化和电阻油墨具有良好的兼容性。为了将无源器件集成水平向前推进一步,我们研究了低K带与高介电常数pb基弛豫材料的材料相容性和共烧方面的问题。在高钾陶瓷带中添加Li盐可以有效地降低烧结温度,使其与低钾陶瓷带的烧结温度相匹配。它还改善了介电性能,最重要的是,为高K材料提供了更宽的加工窗口。本文介绍了高K带铸造工艺的优化,如浆料制备、流变性、固体含量、带释放、层压和与低K基板匹配的收缩。本文还演示了高、低K材料的成功集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Material compatibility and dielectric properties of co-fired high and low dielectric constant ceramic packages
Recent trend in integrated ceramics is to have a 3-dimensional integration of passive components onto the low permittivity dielectric substrate to achieve a monolithic multilayer ceramic (MMC) substrate. MMC substrates offer significant gain in both circuit density and device hermiticity leading to increased reliability and low cost packages. Low-temperature glass-ceramic based low K tapes have been demonstrated to have good compatibility with silver metallization and resistor inks. To push the level of passive component integration one step forward, we studied the materials compatibility and co-firing aspects of low K tapes with high dielectric constant Pb-based relaxer materials. Li salt addition to high K ceramic tape was found to be effective in reducing the sintering temperature to match with that of low K tape. It also improved the dielectric properties and, most importantly, gave a wider processing window for the high K material. This paper describes the optimization of the high K tape casting process such as slurry preparation, rheology, solid content, tape release, lamination, and shrinkage matching with the low-K substrate. This paper also demonstrates the successful integration of high and low K materials.
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