700V薄soi - light，具有大电流能力

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694443

Jing Zhu, Weifeng Sun, Qinsong Qian, L. Cao, Nailong He, Sen Zhang

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引用次数: 17

摘要

本文在1.5μm薄的SOI层上制备了SOI- light三维通道。该器件的主要特点是在发射极区存在大量分离的p体细胞，这可以增加有效通道宽度，增强电子注入，并获得大电流能力。所设计的soi - light具有150A/cm2的电流密度，与传统结构相比提高了150%。soi - light结构可以很好地应用于高压集成电路(HVIC)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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700V thin SOI-LIGBT with high current capability

The tridimensional channel SOI-LIGBT on 1.5μm thin SOI layer is developed in this paper. The key feature of the device is that there are numerous separated P-body cells located in the emitter region, which can increase the efficient channel width, enhance electron injection and attain a large current capability. The proposed SOI-LIGBT exhibits the current density of 150A/cm2, which has an improvement of 150% compared with the conventional structure. The SOI-LIGBT structure can be well applied in high voltage integrated circuit (HVIC).

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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