薄膜封装蚀刻孔设计的优化

Jaewung Lee, J. Sharma, Wang Jian, Lim Leng Khoon, Navab Singh
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引用次数: 1

摘要

本文报道了蚀刻孔的大小、在封盖层上的分布和数量对封盖后的释放时间和封包下变形的影响。在帽层中心均匀分布蚀刻孔有助于缩短释放时间。然而,它会导致大量加载。分布在薄膜封装(TFE)边缘的蚀刻孔有助于保护质量载荷。然而,它增加了TFE的释放时间。因此,需要在帽层上精心布置蚀刻孔,以避免对MEMS器件的质量加载,并最大限度地减少释放时间。本研究的另一个方面是用刻蚀孔数及其盖层分布的函数来检验密封后的向下变形。结果表明,在封盖层中均匀分布的蚀刻孔有助于减小封盖后的应力和向下变形。为了演示TFE,非晶Si和SiO2分别作为牺牲层和帽层。利用XeF2对非晶硅(a-Si)牺牲层进行了刻蚀。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of etch-hole design for the thin film packaging
This paper reports the effect of the etch hole size, their distribution on cap layer and their quantity on the release time, down deformation of encapsulation after sealing. Uniform distribution of the etch hole in the centre of cap layer helps in reducing the release time. However, it results in a mass loading. Etch holes distributed at the edge of the Thin Film Encapsulation (TFE) help in protecting of the mass loading. However, it increases the release time of the TFE. So it is required to carefully arrange the etch holes on the cap layer in such way that mass loading on the MEMS device can be avoided and release time can also be minimized. The other aspect of this study is to check the downward deformation after sealing with a function of number of etch holes and their distribution of the cap layer. It is observed that a uniform distribution of etch hole in the cap layer helps in minimizing the stress and downward deformation of the encapsulation after the sealing process. For demonstrating the TFE, amorphous Si and SiO2 were used as a sacrificial layer and the cap layer, respectively. The etching of amorphous-Si (a-Si) sacrificial layer was performed with help of XeF2.
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