微机械波长选择性可调谐InP MOEMS的新型光学结构

IEEE/LEOS International Conference on Optical MEMs Pub Date : 2002-11-07 DOI:10.1109/OMEMS.2002.1031512

D. Zhou, K. Sun, M. Garrigues, J. Leclercq, P. Regreny, J. Peng, P. Viktorovitch

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引用次数: 6

摘要

本文介绍了一种制造集成波长选择性光探测器(或发射器)的新概念。这些器件基于InP/InGaAs半导体系统，应用波长范围为1.1至1.7 /spl mu/m。这种集成的波长选择性和可调谐有源器件有望成为近红外光谱或WDM光通信的成本效益解决方案。

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Novel optical structure for micromachined wavelength-selective and tunable InP based MOEMS

The paper describes a new concept for the fabrication of integrated wavelength selective photo-detectors (or emitters). These devices are based on the InP/InGaAs semiconductor system for application in the wavelength range from 1.1 to 1.7 /spl mu/m. Such integrated wavelength selective and tunable active devices are expected to be cost effective solutions for NIR spectroscopy or WDM optical communications.

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IEEE/LEOS International Conference on Optical MEMs

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