TSV金属化中自下而上充铜工艺研究

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI:10.1109/EPTC.2018.8654289

Gilho Hwang, Hsiao Hsiang-Yao, D. Wee

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引用次数: 1

摘要

本研究采用分步电流对TSV镀铜。在低电流密度下，含空洞缺陷的TSV和填充固体的TSV表现出不同的电压行为。基于逐级电流电镀和线性电流扫描的电压特性，优化了TSV镀铜工艺，实现了稳定的固体TSV填充，无任何缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study on bottom-up Cu filling process for Through Silicon Via (TSV) metallization

In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized and stable solid TSV filling was achieved without any defect.

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来源期刊

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)

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