随机电报噪声的振幅

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210145

K. Cheung, J. Campbell, S. Potbhare, A. Oates

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引用次数: 2

摘要

建立了一个简单的物理模型来证明RTN的“逆温层空穴”模型实际上是正确的。这个简单的模型可以直观和定量地预测未来器件的RTN振幅。该模型为mosfet中RTN的物理特性提供了额外的激励。

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On the amplitude of random telegraph noise

A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.

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来源期刊

Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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