深亚微米N-MOS快闪存储单元中的非经典热电子门电流

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251001

Y. Zhang, D. Ang, H.P. Kuan, K. Tan

{"title":"深亚微米N-MOS快闪存储单元中的非经典热电子门电流","authors":"Y. Zhang, D. Ang, H.P. Kuan, K. Tan","doi":"10.1109/IPFA.2006.251001","DOIUrl":null,"url":null,"abstract":"In this paper, experimental features of a non-classical hot-electron gate current Ig e obtained under Vb = 0, similar to those reported earlier under reverse Vb are presented. To the best of our knowledge, this is the first direct observation of this non-classical Ig e component in deep submicrometer N-channel MOSFET under conventional CHE biasing, i.e. when Vg ap Vd and Vb = 0. Based on the results, a phenomenological explanation as well as some further supporting experimental evidence is also presented here","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell\",\"authors\":\"Y. Zhang, D. Ang, H.P. Kuan, K. Tan\",\"doi\":\"10.1109/IPFA.2006.251001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, experimental features of a non-classical hot-electron gate current Ig e obtained under Vb = 0, similar to those reported earlier under reverse Vb are presented. To the best of our knowledge, this is the first direct observation of this non-classical Ig e component in deep submicrometer N-channel MOSFET under conventional CHE biasing, i.e. when Vg ap Vd and Vb = 0. Based on the results, a phenomenological explanation as well as some further supporting experimental evidence is also presented here\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文给出了在Vb = 0条件下得到的非经典热电子栅电流Ig e的实验特征，与之前报道的逆Vb条件下的实验特征相似。据我们所知，这是在传统CHE偏置下，即当Vg ap Vd和Vb = 0时，在深亚微米n沟道MOSFET中首次直接观察到这种非经典Ig成分。在此基础上，提出了现象学解释和进一步的实验证据

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Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

In this paper, experimental features of a non-classical hot-electron gate current I_g ^e obtained under V_b = 0, similar to those reported earlier under reverse V_b are presented. To the best of our knowledge, this is the first direct observation of this non-classical I_g ^e component in deep submicrometer N-channel MOSFET under conventional CHE biasing, i.e. when V_g ap V_d and V_b = 0. Based on the results, a phenomenological explanation as well as some further supporting experimental evidence is also presented here

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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