{"title":"具有量子阱和EOT标度的InxGa1−xAs隧道场效应管的性能改进","authors":"D. Ahn, S. Ji, M. Takenaka, S. Takagi","doi":"10.1109/VLSIT.2016.7573443","DOIUrl":null,"url":null,"abstract":"In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well (QW) structure Tunnel FETs (TFETs) has been proposed and demonstrated. The systematic QW In content and thickness dependence on the TFET performance was quantitatively examined. The QW TFETs can significantly enhance the tunneling probability and resulting on-current (I<sub>on</sub>) by lower bandgap (E<sub>g</sub>) of the higher In content InGaAs than bulk In<sub>x</sub>Ga<sub>1-x</sub>As TFETs, while the increase in the off current (I<sub>off</sub>) can be suppressed by source junction formation in low In content In<sub>0.53</sub>Ga<sub>0.47</sub>As regions. The minimum sub-threshold swing (S.S.<sub>min</sub>) of 62 mV/dec was obtained at V<sub>D</sub>=150mV in the In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As (3nm)/In<sub>0.53</sub>Ga<sub>0.47</sub>As QW structure. Also, the highest I<sub>on</sub> of 56μA/μm at V<sub>D</sub>=1V among the fabricated InGaAs QW TFETs was obtained by In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs(5 nm)/In<sub>0.53</sub>Ga<sub>0.47</sub>As QW structure. We have also realized EOT-scaled bulk In<sub>0.53</sub>Ga<sub>0.47</sub>As TFETs with 1.7nm-CET HfO<sub>2</sub> (2.7nm)/Al<sub>2</sub>O<sub>3</sub> (0.3nm) gate stacks, exhibiting S.S<sub>min</sub> of 57 mV/dec at V<sub>D</sub>=100 mV.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling\",\"authors\":\"D. Ahn, S. Ji, M. Takenaka, S. Takagi\",\"doi\":\"10.1109/VLSIT.2016.7573443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well (QW) structure Tunnel FETs (TFETs) has been proposed and demonstrated. The systematic QW In content and thickness dependence on the TFET performance was quantitatively examined. The QW TFETs can significantly enhance the tunneling probability and resulting on-current (I<sub>on</sub>) by lower bandgap (E<sub>g</sub>) of the higher In content InGaAs than bulk In<sub>x</sub>Ga<sub>1-x</sub>As TFETs, while the increase in the off current (I<sub>off</sub>) can be suppressed by source junction formation in low In content In<sub>0.53</sub>Ga<sub>0.47</sub>As regions. The minimum sub-threshold swing (S.S.<sub>min</sub>) of 62 mV/dec was obtained at V<sub>D</sub>=150mV in the In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As (3nm)/In<sub>0.53</sub>Ga<sub>0.47</sub>As QW structure. Also, the highest I<sub>on</sub> of 56μA/μm at V<sub>D</sub>=1V among the fabricated InGaAs QW TFETs was obtained by In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs(5 nm)/In<sub>0.53</sub>Ga<sub>0.47</sub>As QW structure. We have also realized EOT-scaled bulk In<sub>0.53</sub>Ga<sub>0.47</sub>As TFETs with 1.7nm-CET HfO<sub>2</sub> (2.7nm)/Al<sub>2</sub>O<sub>3</sub> (0.3nm) gate stacks, exhibiting S.S<sub>min</sub> of 57 mV/dec at V<sub>D</sub>=100 mV.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling
In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As Quantum Well (QW) structure Tunnel FETs (TFETs) has been proposed and demonstrated. The systematic QW In content and thickness dependence on the TFET performance was quantitatively examined. The QW TFETs can significantly enhance the tunneling probability and resulting on-current (Ion) by lower bandgap (Eg) of the higher In content InGaAs than bulk InxGa1-xAs TFETs, while the increase in the off current (Ioff) can be suppressed by source junction formation in low In content In0.53Ga0.47As regions. The minimum sub-threshold swing (S.S.min) of 62 mV/dec was obtained at VD=150mV in the In0.53Ga0.47As/InxGa1-xAs (3nm)/In0.53Ga0.47As QW structure. Also, the highest Ion of 56μA/μm at VD=1V among the fabricated InGaAs QW TFETs was obtained by In0.53Ga0.47As/InAs(5 nm)/In0.53Ga0.47As QW structure. We have also realized EOT-scaled bulk In0.53Ga0.47As TFETs with 1.7nm-CET HfO2 (2.7nm)/Al2O3 (0.3nm) gate stacks, exhibiting S.Smin of 57 mV/dec at VD=100 mV.
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