采用低温连接技术的模块高温振荡下的功率循环

R. Amro, J. Lutz, J. Rudzki, R. Sittig, M. Thoben
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引用次数: 48

摘要

目前,标准封装和互连技术将最高结温(Tjmax)限制在150℃左右。这种限制是由于铝键合线和软焊点的功率循环能力有限造成的。然而,功率器件的重要应用需要175摄氏度甚至200摄氏度的工作温度。为了评估低温连接技术(LTJT)对未来模块设置的适用性,准备并研究了测试样品。仅更换芯片到衬底的焊点(单侧LTJT),在DeltaTj=130K时的功率循环能力提高了5倍,在DeltaTj=156K时的功率循环能力提高了10倍,相比于在这些条件下焊接和线键合器件的预期能力。将LTJT应用于芯片的顶部连接,即用LTJT(双面LTJT)连接的银条代替键合线,进一步提高了功率循环能力
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power Cycling at High Temperature Swings of Modules with Low Temperature Joining Technique
Standard packaging and interconnection technologies limit the maximal junction temperature (Tjmax) to about 150degC at present. This restriction is caused by the limited power cycling capabilities of Al bond wires and of soft solder joints. Important applications of power devices, however, require operating temperatures of 175degC or even 200degC. To evaluate the suitability of the low temperature joining technique (LTJT) for future module set-up, test samples were prepared and investigated. Already the replacement of only the chip-to-substrate solder joint (one-sided LTJT) improved the power cycling capability at DeltaTj=130K five times or at a DeltaTj=156K ten times compared to the expected capability of soldered and wire bonded devices at these conditions. Application of LTJT to top side chip connections also, i.e. additional replacement of bond wires by silver stripes joined by LTJT (double-sided LTJT), yielded a further increase of power cycling capability
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