利用探测技术识别和研究90纳米及以下工艺开发中的高泄漏问题

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.250997

E. Hendarto, Z. Mai, P. K. Tan, A. Lek, B. Lau, J. Lam, W. Chim

{"title":"利用探测技术识别和研究90纳米及以下工艺开发中的高泄漏问题","authors":"E. Hendarto, Z. Mai, P. K. Tan, A. Lek, B. Lau, J. Lam, W. Chim","doi":"10.1109/IPFA.2006.250997","DOIUrl":null,"url":null,"abstract":"The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90 nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I-V characteristics of good and leaky transistors","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Using Probing Techniques to Identify and Study High Leakage Issues in the Development of 90nm Process and Below\",\"authors\":\"E. Hendarto, Z. Mai, P. K. Tan, A. Lek, B. Lau, J. Lam, W. Chim\",\"doi\":\"10.1109/IPFA.2006.250997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90 nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I-V characteristics of good and leaky transistors\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.250997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.250997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了基于扫描探针显微镜的导电原子力显微镜(C-AFM)和隧道原子力显微镜(TUNA)技术与纳米探针技术的结合。在90 nm及以下工艺中，C-AFM通过电流映射来识别泄漏，而TUNA通过测量不同触点的电流-电压(I-V)曲线来研究单个触点的完整性。纳米探针用于获得和比较良好和漏态晶体管的I-V特性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Using Probing Techniques to Identify and Study High Leakage Issues in the Development of 90nm Process and Below

The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90 nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I-V characteristics of good and leaky transistors

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量