扩散沟道和生长沟道mesfet的SPICE直流参数提取

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292927

A.S. Lujan, Ivan Chueiri, J. Swart, F. Prince, P.H. Tessari

{"title":"扩散沟道和生长沟道mesfet的SPICE直流参数提取","authors":"A.S. Lujan, Ivan Chueiri, J. Swart, F. Prince, P.H. Tessari","doi":"10.1109/ICMTS.1993.292927","DOIUrl":null,"url":null,"abstract":"A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SPICE DC parameter extraction of MESFETs with diffused and grown channel\",\"authors\":\"A.S. Lujan, Ivan Chueiri, J. Swart, F. Prince, P.H. Tessari\",\"doi\":\"10.1109/ICMTS.1993.292927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种提取GaAs mesfet直流参数的方法。所开发的程序可使计算得到的I-V曲线与实验特性进行最佳拟合。器件通过两种不同的工艺制备，产生不同的通道掺杂结构和不同的通道长度器件。给出了这些器件的提取参数并进行了分析

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SPICE DC parameter extraction of MESFETs with diffused and grown channel

A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

自引率

0.00%

发文量