互连扩展-高性能ULSI的真正限制因素

M. Bohr
{"title":"互连扩展-高性能ULSI的真正限制因素","authors":"M. Bohr","doi":"10.1109/IEDM.1995.499187","DOIUrl":null,"url":null,"abstract":"Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of /spl sim/2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"537","resultStr":"{\"title\":\"Interconnect scaling-the real limiter to high performance ULSI\",\"authors\":\"M. Bohr\",\"doi\":\"10.1109/IEDM.1995.499187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of /spl sim/2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"537\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 537

摘要

减小互连间距可提高布局密度,但会降低互连RC延迟。增加金属长宽比(厚度/宽度)可以改善RC延迟,但在长宽比为/ sp1sim /2时可以实现最大效益。增加更多的互连层可以提高密度和性能,但在短短几代内就达到了实际极限。新的导体和介电材料以及改进的电路设计技术将需要满足未来的ULSI互连要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interconnect scaling-the real limiter to high performance ULSI
Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of /spl sim/2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信