逻辑技术中EUV插入策略的尺度范式变化

R. Kim
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引用次数: 7

摘要

在对纯间距缩放的成本和复杂性日益关注的情况下,逻辑技术中的缩放范式正在发生变化,采用了设计技术协同优化(DTCO)和系统技术协同优化(STCO)。在这种技术快速发展的背景下,极紫外光刻(EUVL)将从2019年开始进入大批量制造(HVM)领域,重点将从基础设施准备就绪转向大批量制造能力。在本次演讲中,将从当前和未来的行业技术节点的角度讨论EUV插入逻辑技术节点的策略。由于EUV在掩模、图案、计算光刻和设计方面仍然存在技术挑战,因此将讨论如何将EUV与其他技术考虑相结合,以实现顺利采用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EUV insertion strategy into logic technology on the horizon of scaling paradigm change
Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.
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