{"title":"逻辑技术中EUV插入策略的尺度范式变化","authors":"R. Kim","doi":"10.1117/12.2516524","DOIUrl":null,"url":null,"abstract":"Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"EUV insertion strategy into logic technology on the horizon of scaling paradigm change\",\"authors\":\"R. Kim\",\"doi\":\"10.1117/12.2516524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.\",\"PeriodicalId\":147291,\"journal\":{\"name\":\"Extreme Ultraviolet (EUV) Lithography X\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extreme Ultraviolet (EUV) Lithography X\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2516524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extreme Ultraviolet (EUV) Lithography X","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2516524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EUV insertion strategy into logic technology on the horizon of scaling paradigm change
Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.