在SPICE中实现了一种基于物理的DMOS晶体管模型，用于高级功率IC TCAD

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515061

Yeonbae Chung, D. Burk

{"title":"在SPICE中实现了一种基于物理的DMOS晶体管模型，用于高级功率IC TCAD","authors":"Yeonbae Chung, D. Burk","doi":"10.1109/ISPSD.1995.515061","DOIUrl":null,"url":null,"abstract":"A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD\",\"authors\":\"Yeonbae Chung, D. Burk\",\"doi\":\"10.1109/ISPSD.1995.515061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.\",\"PeriodicalId\":200109,\"journal\":{\"name\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1995.515061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1995.515061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

基于物理的预测半数值横向DMOS晶体管模型，该模型直接实现在市售的SPICE2G中。源代码，是描述和验证与实验测量。与现有的功率器件子电路模型不同，我们的模型能够考虑器件的独特结构，如渐变通道和非平面漂移区。在SPICE中实现的新模型具有直接使用器件和工艺参数的优点，可用于计算机辅助电源集成电路设计。

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A physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD

A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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