新颖的像素结构与堆叠深度光电二极管，以实现高近红外灵敏度和高MTF

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573450

Hiroki Takahashi, Hiroshi Tanaka, M. Oda, Mitsuyoshi Ando, N. Niisoe, S. Kawai, Takuya Asano, Minoru Sudo, M. Yoshita, Tohru Yamada

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引用次数: 2

摘要

叠置深度光电二极管(SDP)具有高近红外(NIR)灵敏度和高调制传递函数(MTF)的新颖像素结构。在850nm波长下，5.4μm像素间距的SDP通过与相邻像素完全分离的光电二极管堆叠，在Nyquist频率下实现了30%的量子效率(QE)和40%的MTF。

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Novel pixel structure with Stacked Deep Photodiode to achieve high NIR sensitivity and high MTF

Novel pixel structure with Stacked Deep Photodiode (SDP) has been newly developed for both high Near Infra-Red (NIR) sensitivity and high Modulation Transfer Function (MTF). SDP with 5.4μm pixel pitch has achieved Quantum Efficiency (QE) of 30% and MTF of 40% at Nyquist frequency at 850nm wavelength by stacking photodiode completely separated from neighboring pixels.

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来源期刊

2016 IEEE Symposium on VLSI Technology

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