用于性能增强的AlGaN/GaN hemt应变工程

2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India) Pub Date : 2019-02-01 DOI:10.1109/MOS-AK.2019.8902465

E. Mohapatra, S. Das, Tara Prasanna Dash, S. Dey, J. Jena, C. K. Maiti

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引用次数: 0

摘要

异质结构器件设计正从硅扩展到化合物半导体，例如III-V。与在Si器件中使用应变技术不同，应力方法尚未被有意地用于III-V半导体器件。在这项工作中，我们研究了在器件制造过程中使用应变工程技术来改变GaN HEMT性能的潜力。我们通过TCAD模拟研究了工艺诱导应力对AlGaN/GaN hemt电性能的影响。

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Strain Engineering in AlGaN/GaN HEMTs for Performance Enhancement

The heterostructure device designs are extending from Silicon to compound semiconductors e.g. III-V. Unlike use of the strain technology in Si devices, stressing methods have not yet been intentionally used in III-V semiconductor devices. In this work, we examine the potential of using strain engineering technology during device fabrication to alter GaN HEMT performance. We examine the process-induced stress effect on the electrical performance of AlGaN/GaN HEMTs via TCAD simulation.

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2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)

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