{"title":"一种表征热载流子引起的mosfet退化的新方法","authors":"A. Acovic, M. Dutoit, M. Ilegems","doi":"10.1109/LTSE.1989.50194","DOIUrl":null,"url":null,"abstract":"A novel method for characterizing HC (hot carrier) degradation in MOSFETs, based on the measurement of the field-induced drain-substrate tunnel diode at 77 K, is proposed. This method is applied to MOSFETs stressed at 300 K and 77 K. The measurements demonstrate the creation of interface states directly above the n/sup +/ zone in NMOSFETs and trapped negative charge in its vicinity. In PMOSFETs damage occurs closer to the channel. It is also shown that the greater degradation of the electrical characteristics of NMOSFETs during HC stress at low temperature is not solely due to the increased effective damage (interface states or trapped charge), but is also due to the increased effects of a given damage.<<ETX>>","PeriodicalId":428125,"journal":{"name":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel method for characterizing degradation of MOSFETs caused by hot-carriers\",\"authors\":\"A. Acovic, M. Dutoit, M. Ilegems\",\"doi\":\"10.1109/LTSE.1989.50194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel method for characterizing HC (hot carrier) degradation in MOSFETs, based on the measurement of the field-induced drain-substrate tunnel diode at 77 K, is proposed. This method is applied to MOSFETs stressed at 300 K and 77 K. The measurements demonstrate the creation of interface states directly above the n/sup +/ zone in NMOSFETs and trapped negative charge in its vicinity. In PMOSFETs damage occurs closer to the channel. It is also shown that the greater degradation of the electrical characteristics of NMOSFETs during HC stress at low temperature is not solely due to the increased effective damage (interface states or trapped charge), but is also due to the increased effects of a given damage.<<ETX>>\",\"PeriodicalId\":428125,\"journal\":{\"name\":\"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTSE.1989.50194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Workshop on Low Temperature Semiconductor Electronics,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTSE.1989.50194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel method for characterizing degradation of MOSFETs caused by hot-carriers
A novel method for characterizing HC (hot carrier) degradation in MOSFETs, based on the measurement of the field-induced drain-substrate tunnel diode at 77 K, is proposed. This method is applied to MOSFETs stressed at 300 K and 77 K. The measurements demonstrate the creation of interface states directly above the n/sup +/ zone in NMOSFETs and trapped negative charge in its vicinity. In PMOSFETs damage occurs closer to the channel. It is also shown that the greater degradation of the electrical characteristics of NMOSFETs during HC stress at low temperature is not solely due to the increased effective damage (interface states or trapped charge), but is also due to the increased effects of a given damage.<>
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