PECVD-Ti工艺中TiCl/ sub4 /预处理对低于0.2 /spl mu/m金属钻头线触头的影响

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854285

S. Kang, K. Moon, H. Park, M. Lee, Gilheyun Choi, Y. Park, Sang In Lee, M. Lee

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引用次数: 1

摘要

研究了PECVD-Ti工艺初始步骤的影响，以优化TiSi/sub x/地层。在等离子体前处理和TiCl/sub - 4/前处理中，TiSi/sub - x/的形成有显著差异，其中初始步骤从有等离子体的H/sub - 2/气体开始，而没有等离子体的TiCl/sub - 4/气体开始。对PECVD-Ti工艺中的TiCl/sub - 4/预处理与H/sub - 2/等离子体预处理进行了比较，特别是在低纵横比接触时。经H/sub - 2/等离子体预处理的PECVD-Ti薄膜在Si与TiSi/sub - x/的界面处积累Cl杂质，从而使TiSi/sub - x/变薄，接触电阻增大。采用优化后的TiCl/sub 4/预处理，在sub-0.2 /spl mu/m位线触点处获得了优异的电特性。

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Effect of TiCl/sub 4/ pre-treatment in PECVD-Ti process for sub-0.2 /spl mu/m metal bit line contacts

The effect of the initial steps in PECVD-Ti process is investigated for the optimization of TiSi/sub x/ formation. A remarkable difference in TiSi/sub x/ formation is observed between pre-plasma and pre-TiCl/sub 4/ treatment in which the initial steps start with H/sub 2/ gas with plasma and TiCl/sub 4/ gas without plasma. TiCl/sub 4/ pre-treatment in the PECVD-Ti process is compared with H/sub 2/ plasma pre-treatment especially for low aspect ratio contacts. PECVD-Ti films with H/sub 2/ plasma pre-treatment results in accumulation of Cl impurities at the interface between Si and TiSi/sub x/, and subsequently results in thinner TiSi/sub x/ and higher contact resistance. With the optimized TiCl/sub 4/ pretreatment, excellent electrical characteristics are obtained in sub-0.2 /spl mu/m bit line contacts.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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