Yi-Chou Chen, R. Liu
{"title":"Future trend of flash memories","authors":"Yi-Chou Chen, R. Liu","doi":"10.1109/MTDT.2007.4547607","DOIUrl":null,"url":null,"abstract":"Summary form only given. Flash memories have provided reliable solid-state storage solutions for over twenty years. In the last few years we have seen an explosive growth of NAND flash, fueled by digital camera, USB, MP3, iPhone and numerous new mobile applications. However, this phenomenal boom is silently threatened by scaling limitations intrinsically built into the flash devices. Old challenges such as scaling the charge tunneling oxide have remained unconquered (and now proven unconquerable) for nearly a decade, and new challenges such as floating gate cross talk become more serious with scaling. Will flash technology be simply a brief flash in the history of semiconductor? In this talk we will start with the flash memory technology and market trend. We will then discuss the scaling issues for NOR and NAND floating gate devices, and their fundamental limitations. Potential solutions, including both new devices and architecture and completely new types of non-volatile memory will then be discussed. Recent progresses in new NAND and NOR flash memory solutions or substitutes such as TANOS, BE-SONOS, 3D stacking and phase change memory will be examined in considerable details.","PeriodicalId":422226,"journal":{"name":"2007 IEEE International Workshop on Memory Technology, Design and Testing","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2007.4547607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

只提供摘要形式。闪存已经提供了可靠的固态存储解决方案超过二十年。在过去的几年里,在数码相机、USB、MP3、iPhone和许多新的移动应用的推动下,我们看到了NAND闪存的爆炸式增长。然而,这种惊人的繁荣正默默地受到闪存设备固有的扩展限制的威胁。过去的挑战,如缩放电荷隧道氧化物,在近十年的时间里一直没有被克服(现在证明是不可克服的),而新的挑战,如浮动栅极串扰,随着缩放变得更加严重。闪存技术会不会仅仅是半导体历史上的短暂闪现?在这次演讲中,我们将从闪存技术和市场趋势开始。然后我们将讨论NOR和NAND浮栅器件的缩放问题,以及它们的基本限制。届时将讨论潜在的解决方案,包括新的设备和架构以及全新类型的非易失性存储器。新的NAND和NOR闪存解决方案或替代品的最新进展,如TANOS, be - sonos, 3D堆叠和相变存储器将进行相当详细的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Future trend of flash memories
Summary form only given. Flash memories have provided reliable solid-state storage solutions for over twenty years. In the last few years we have seen an explosive growth of NAND flash, fueled by digital camera, USB, MP3, iPhone and numerous new mobile applications. However, this phenomenal boom is silently threatened by scaling limitations intrinsically built into the flash devices. Old challenges such as scaling the charge tunneling oxide have remained unconquered (and now proven unconquerable) for nearly a decade, and new challenges such as floating gate cross talk become more serious with scaling. Will flash technology be simply a brief flash in the history of semiconductor? In this talk we will start with the flash memory technology and market trend. We will then discuss the scaling issues for NOR and NAND floating gate devices, and their fundamental limitations. Potential solutions, including both new devices and architecture and completely new types of non-volatile memory will then be discussed. Recent progresses in new NAND and NOR flash memory solutions or substitutes such as TANOS, BE-SONOS, 3D stacking and phase change memory will be examined in considerable details.
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