{"title":"航空图像测量工具在光刻过程中的初步验证","authors":"Hyemi Lee, Goomin Jeong, Sangchul Kim, O. Han","doi":"10.1117/12.746786","DOIUrl":null,"url":null,"abstract":"The AIMS (Aerial Image Measurement Tool) measures approximate aerial images to scanner results by adjusting the numerical aperture, illumination type and partial parameters. Accordingly, AIMS tool is used generally to verify the issue points during manufacturing a mask. Normally using a mask for photolithography needs twice verifications. One is the qualification in the mask shop. The other is verification over the photo process using the mask in the wafer fab. If evaluated data at AIMS can be trusted about photo process ability including energy latitude (EL), depth of focus (DOF), CD uniformity (CDU), pattern fidelity and mask defects including repair area, AIMS can function as a first filter before shipping the mask. That means the AIMS data can be used as a preliminary data in the wafer fab. So this study is focused on correlation between measured data at AIMS fab 193i and ArF scanner over the photo process such as EL, DOF, CDU, pattern fidelity and mask defects. First, various patterns are made on attenuated PSM from 80 to 65nm tech. Next correlations are calculated about EL, DOF and CDU by using same optical conditions, measurement points and etc at AIMS and Scanner. Also the aerial images from AIMS are compared with scanner results on defective side how those are matched with each other. Consequently defect printability and CDU map at AIMS were similar to the scanner. In CDU point of view, AIMS exceeds the predictive ability of the mask CD SEM. Moreover it means that wafer CDU can be corrected (improved) independently on the CDU result of the wafer fab by using CDU correctable femto laser tool which reduces transmittance of the mask. Surprisingly, it is possible. And Aerial image about mask defects including repair area is useful to predict the problem of the mask, since it is similar to wafer results. But aerial image compared with wafer image has more difference at 65nm technology node than at 80nm. If adjustment of threshold or measuring method can be done, prediction of the scanner result will have no matter. In conclusion, predictive results at AIMS over photo process can be applied as a preliminary data and it can be used to another index verifying the mask quality.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"6730 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preliminary verifiability of the aerial image measurement tool over photolithography process\",\"authors\":\"Hyemi Lee, Goomin Jeong, Sangchul Kim, O. Han\",\"doi\":\"10.1117/12.746786\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The AIMS (Aerial Image Measurement Tool) measures approximate aerial images to scanner results by adjusting the numerical aperture, illumination type and partial parameters. Accordingly, AIMS tool is used generally to verify the issue points during manufacturing a mask. Normally using a mask for photolithography needs twice verifications. One is the qualification in the mask shop. The other is verification over the photo process using the mask in the wafer fab. If evaluated data at AIMS can be trusted about photo process ability including energy latitude (EL), depth of focus (DOF), CD uniformity (CDU), pattern fidelity and mask defects including repair area, AIMS can function as a first filter before shipping the mask. That means the AIMS data can be used as a preliminary data in the wafer fab. So this study is focused on correlation between measured data at AIMS fab 193i and ArF scanner over the photo process such as EL, DOF, CDU, pattern fidelity and mask defects. First, various patterns are made on attenuated PSM from 80 to 65nm tech. Next correlations are calculated about EL, DOF and CDU by using same optical conditions, measurement points and etc at AIMS and Scanner. Also the aerial images from AIMS are compared with scanner results on defective side how those are matched with each other. Consequently defect printability and CDU map at AIMS were similar to the scanner. In CDU point of view, AIMS exceeds the predictive ability of the mask CD SEM. Moreover it means that wafer CDU can be corrected (improved) independently on the CDU result of the wafer fab by using CDU correctable femto laser tool which reduces transmittance of the mask. Surprisingly, it is possible. And Aerial image about mask defects including repair area is useful to predict the problem of the mask, since it is similar to wafer results. But aerial image compared with wafer image has more difference at 65nm technology node than at 80nm. If adjustment of threshold or measuring method can be done, prediction of the scanner result will have no matter. 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引用次数: 0
摘要
AIMS(航空图像测量工具)通过调整数值孔径、照明类型和部分参数,将近似航空图像测量到扫描仪结果。因此,通常使用AIMS工具来验证掩模制造过程中的问题点。通常使用掩模进行光刻需要两次验证。一是口罩店的资质。另一个是在晶圆厂中使用掩模对照相过程进行验证。如果在AIMS上评估的数据可以信任光处理能力,包括能量纬度(EL)、焦深(DOF)、CD均匀性(CDU)、模式保真度和掩模缺陷(包括修复面积),AIMS可以作为发货前的第一滤光片。这意味着AIMS数据可以作为晶圆厂的初步数据。因此,本研究的重点是AIMS fab 193i和ArF扫描仪在摄影过程中测量数据的相关性,如EL, DOF, CDU,模式保真度和掩膜缺陷。首先,在80 ~ 65nm的衰减PSM技术上制作各种图案。接下来,在AIMS和Scanner上使用相同的光学条件、测量点等计算EL、DOF和CDU的相关性。并将航空成像与缺陷侧扫描结果进行了对比,分析了两者的匹配情况。因此,在AIMS上的缺陷可打印性和CDU图与扫描仪相似。从CDU的角度来看,AIMS超过了掩模CD SEM的预测能力。这意味着晶圆CDU可以在晶圆厂的CDU结果上独立进行校正(改进),使用可校正CDU的飞飞激光工具,降低掩模的透过率。令人惊讶的是,这是可能的。而包含修复区域的掩模缺陷航拍图像与晶片结果相似,可用于掩模问题的预测。但航空图像与晶片图像相比,在65nm技术节点上的差异大于80nm。若能调整阈值或测量方法,则可对扫描结果进行预测。综上所述,AIMS在光处理过程中的预测结果可以作为初步数据,并可用于验证掩模质量的另一个指标。
Preliminary verifiability of the aerial image measurement tool over photolithography process
The AIMS (Aerial Image Measurement Tool) measures approximate aerial images to scanner results by adjusting the numerical aperture, illumination type and partial parameters. Accordingly, AIMS tool is used generally to verify the issue points during manufacturing a mask. Normally using a mask for photolithography needs twice verifications. One is the qualification in the mask shop. The other is verification over the photo process using the mask in the wafer fab. If evaluated data at AIMS can be trusted about photo process ability including energy latitude (EL), depth of focus (DOF), CD uniformity (CDU), pattern fidelity and mask defects including repair area, AIMS can function as a first filter before shipping the mask. That means the AIMS data can be used as a preliminary data in the wafer fab. So this study is focused on correlation between measured data at AIMS fab 193i and ArF scanner over the photo process such as EL, DOF, CDU, pattern fidelity and mask defects. First, various patterns are made on attenuated PSM from 80 to 65nm tech. Next correlations are calculated about EL, DOF and CDU by using same optical conditions, measurement points and etc at AIMS and Scanner. Also the aerial images from AIMS are compared with scanner results on defective side how those are matched with each other. Consequently defect printability and CDU map at AIMS were similar to the scanner. In CDU point of view, AIMS exceeds the predictive ability of the mask CD SEM. Moreover it means that wafer CDU can be corrected (improved) independently on the CDU result of the wafer fab by using CDU correctable femto laser tool which reduces transmittance of the mask. Surprisingly, it is possible. And Aerial image about mask defects including repair area is useful to predict the problem of the mask, since it is similar to wafer results. But aerial image compared with wafer image has more difference at 65nm technology node than at 80nm. If adjustment of threshold or measuring method can be done, prediction of the scanner result will have no matter. In conclusion, predictive results at AIMS over photo process can be applied as a preliminary data and it can be used to another index verifying the mask quality.