电子辐射对SEM、FIB和TEM分析半导体失效影响的综述

Binghai Liu, Younan Hua, Z. Dong, P. K. Tan, Yuzhe Zhao, Zhiqiang Mo, J. Lam, Z. Mai
{"title":"电子辐射对SEM、FIB和TEM分析半导体失效影响的综述","authors":"Binghai Liu, Younan Hua, Z. Dong, P. K. Tan, Yuzhe Zhao, Zhiqiang Mo, J. Lam, Z. Mai","doi":"10.1109/IPFA.2018.8452485","DOIUrl":null,"url":null,"abstract":"The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Overview of the Impacts of Electron Radiation on Semiconductor Failure Analysis by SEM, FIB and TEM\",\"authors\":\"Binghai Liu, Younan Hua, Z. Dong, P. K. Tan, Yuzhe Zhao, Zhiqiang Mo, J. Lam, Z. Mai\",\"doi\":\"10.1109/IPFA.2018.8452485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文简要介绍了电子束辐射损伤及其对SEM、FIB和TEM物理失效分析的影响。在对典型电子束敏感材料的电子辐射研究的基础上,讨论了半导体和MRAM器件中Lk/ULK、氮化硅和CoFeB薄膜材料的电子辐射损伤的一些有趣结果。细节包括辐射引起的微观结构变化。、材料扩散和相变。并简要讨论了电子辐射对不同材料的损伤机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Overview of the Impacts of Electron Radiation on Semiconductor Failure Analysis by SEM, FIB and TEM
The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.
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