NIST和SWEAT结构的晶圆级电迁移测试

Proceedings International Conference on Microelectronic Test Structures Pub Date : 1995-03-22 DOI:10.1109/ICMTS.1995.513978

F. Giroux, C. Gounelle, P. Mortini, G. Ghibaudo

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引用次数: 8

摘要

在NIST和SWEAT结构上进行了晶圆级电迁移测试。测试了四种不同的流程分割。对于300/spl度/C的最大线路温度，这两种结构都允许检测过程中的差异。另一方面，在较高的最高温度下，电迁移试验没有观察到过程的差异。在这些结果的基础上，讨论了SWEAT和NIST结构的优缺点。

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Wafer-level electromigration tests on NIST and SWEAT structures

Wafer-level electromigration tests are carried out on NIST and SWEAT structures. Four different process splits are tested. For 300/spl deg/C maximum line temperature both structures allow detection of the differences in the process. On the other hand, for high maximum temperature no difference in process is observed by the electromigration tests. On the basis of these results, advantages and drawbacks of SWEAT and NIST structures are discussed.

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Proceedings International Conference on Microelectronic Test Structures

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