SrTiO3/GaAs上的铁电Pb(Zr, Ti)O3薄层

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880535

B. Meunier, L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons

{"title":"SrTiO3/GaAs上的铁电Pb(Zr, Ti)O3薄层","authors":"B. Meunier, L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons","doi":"10.1109/ICIPRM.2014.6880535","DOIUrl":null,"url":null,"abstract":"Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs\",\"authors\":\"B. Meunier, L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons\",\"doi\":\"10.1109/ICIPRM.2014.6880535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光沉积方法，在分子束外延制备的SrTiO3/GaAs模板上生长出铁电外延Pb(Zr, Ti)O3(PZT)层。模板具有优良的结构质量，SrTiO3/GaAs在原子尺度上是突兀的。x射线衍射分析表明，PZT层含有a-和c-畴。压电响应力显微镜实验和宏观电学表征表明PZT具有铁电性。从这些测量中提取出相对介电常数为164。

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Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs

Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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