在发射体聚沉积前进行臭氧表面处理可提高NPN产率

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 2003-04-22 DOI:10.1109/ASMC.2003.1194509

T. Tran-Quinn, N. Bell, R. Cook, M. Fung, J. W. Andrews, D. Hilscher, D. Szmyd, V. Saikuma, R. Ketcheson, P. Kellawon, S. Calvelli

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引用次数: 0

摘要

在0.25um BiCMOS产品上观察到局部产品产率下降，并发现与NPN基极和发射极电流的抑制有关。在发射极多晶硅沉积之前添加臭氧等离子体清洁有助于改善晶圆上的基极电流分布。

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NPN yield improvement with ozone surface treatment prior to emitter poly deposition

A localized product yield degradation was observed on 0.25um BiCMOS product and was found to correlate to suppression of the NPN base and emitter currents. The addition of an ozone plasma clean prior to emitter polysilicon deposition helped to improve base current distribution across the wafers.

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Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

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